| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 392 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 393 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 394 |
2N6339 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 395 |
2N6340 |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 396 |
2N6340A |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 397 |
2N6765 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 398 |
2N6766 |
N-Channel Power MOSFETs/ 30A/ 150V/200V |
Fairchild Semiconductor |
| 399 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 400 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 401 |
2N6766 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 402 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
| 403 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
| 404 |
2N6963 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
| 405 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 406 |
2N930A |
NPN Transistor General Purpose |
Amelco Semiconductor |
| 407 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 408 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 409 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 410 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 411 |
2N930A |
Silicon NPN Transistor |
Motorola |
| 412 |
2N930A |
Small Signal Planar NPN Silicon Transistor |
Transitron Electronic |
| 413 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 414 |
2SB0930A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 415 |
2SB1030A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 416 |
2SB1130AM |
Epitaxial Planar PNP Silicon Transistor |
ROHM |
| 417 |
2SB930A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 418 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 419 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
| 420 |
2SK1030A |
Silicon N-Channel Power F-MOS FET |
Panasonic |
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