| No. |
Part Name |
Description |
Manufacturer |
| 391 |
NMC2764H-30 |
65,536-BIT (8192x8) UV ERASABLE PROM |
National Semiconductor |
| 392 |
NMC2764H-4 |
65,536-BIT (8192x8) UV ERASABLE PROM |
National Semiconductor |
| 393 |
NMC2764H-45 |
65,536-BIT (8192x8) UV ERASABLE PROM |
National Semiconductor |
| 394 |
NMC2764HE |
65,536-BIT (8192x8) UV ERASABLE PROM |
National Semiconductor |
| 395 |
NMC27C64 |
65,536-Bit (8192 x 8) CMOS PROM |
National Semiconductor |
| 396 |
NMC27C64N150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 397 |
NMC27C64N200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 398 |
NMC27C64N250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 399 |
NMC27C64Q150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 400 |
NMC27C64Q200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 401 |
NMC27C64Q250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 402 |
NMC27C64Q300 |
300 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 403 |
NMC27C64QE150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 404 |
NMC27C64QE200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 405 |
NMC27C64QM200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 406 |
NMC27C64QM250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 407 |
NX8562LB836-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. Anode ground. FC-PC connector. |
NEC |
| 408 |
NX8562LF836-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. Anode floating. FC-PC connector. |
NEC |
| 409 |
NX8563LB836-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. FC-PC connector. Anode ground. |
NEC |
| 410 |
NX8563LF836-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. FC-PC connector. Anode floating. |
NEC |
| 411 |
SI4136-BT |
ISM RF synthesizer with integrated VCOs for wireless communications. 2.5GHz/2.3GHz/IF out |
Silicon Laboratories |
| 412 |
SLE5536-BDC |
Security & Chip Card ICs |
Infineon |
| 413 |
SLE5536-BDM3 |
Security & Chip Card ICs |
Infineon |
| 414 |
SLE6636-BDC |
Secure Mobile Solutions |
Infineon |
| 415 |
SLE6636-BDM3 |
Secure Mobile Solutions |
Infineon |
| 416 |
SLE7736-BD-V3C |
Security & Chip Card ICs |
Infineon |
| 417 |
SLE7736-BD-V3M3 |
Security & Chip Card ICs |
Infineon |
| 418 |
SLE7736-BDC |
Security & Chip Card ICs |
Infineon |
| 419 |
SLE7736-BDM3 |
Security & Chip Card ICs |
Infineon |
| 420 |
SN54ABTH32245 |
36-Bit Bus Transceivers With 3-State Outputs |
Texas Instruments |
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