No. |
Part Name |
Description |
Manufacturer |
391 |
M87C257-45XF7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
392 |
MAX6745XKLD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
393 |
MAX6745XKLD3-T |
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
394 |
MAX6745XKMD3-T |
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
395 |
MAX6745XKRD3 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
396 |
MAX6745XKRD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
397 |
MAX6745XKRD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
398 |
MAX6745XKRD3-T |
Vcc1: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
399 |
MAX6745XKSD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
400 |
MAX6745XKSD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
401 |
MAX6745XKSD3-T |
Vcc1: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
402 |
MAX6745XKTD3-T |
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
403 |
MAX6745XKVD3 |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
404 |
MAX6745XKVD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
405 |
MAX6745XKVD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
406 |
MAX6745XKVD3-T |
Vcc1: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
407 |
MAX6745XKWD3-T |
Vcc1: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
408 |
MAX6745XKYD3-T |
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
409 |
MAX6745XKZD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
410 |
MAX6745XKZD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
411 |
MAX6745XKZD3-T |
Vcc1: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
412 |
MAX6745XK_D_-T |
Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
413 |
MAX8645X |
1x/1.5x/2x White LED Charge Pumps with Two LDOs in 4mm x 4mm TQFN |
MAXIM - Dallas Semiconductor |
414 |
MAX8645XETI+ |
1x/1.5x/2x White LED Charge Pumps with Two LDOs in 4mm x 4mm TQFN |
MAXIM - Dallas Semiconductor |
415 |
MAX8645XETI+T |
1x/1.5x/2x White LED Charge Pumps with Two LDOs in 4mm x 4mm TQFN |
MAXIM - Dallas Semiconductor |
416 |
MAX8845X |
28V Linear Li+ Battery Chargers with Battery Detection and Overvoltage-Protected Output |
MAXIM - Dallas Semiconductor |
417 |
MAX8845XETC+ |
28V Linear Li+ Battery Chargers with Battery Detection and Overvoltage-Protected Output |
MAXIM - Dallas Semiconductor |
418 |
MAX8845XETC+T |
28V Linear Li+ Battery Chargers with Battery Detection and Overvoltage-Protected Output |
MAXIM - Dallas Semiconductor |
419 |
MCRF450 |
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate with interrogator wir |
Microchip |
420 |
MCRF452 |
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate with interrogator wir |
Microchip |
| | | |