| No. |
Part Name |
Description |
Manufacturer |
| 391 |
C230F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 392 |
C230F3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 393 |
C231F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 394 |
C231F3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 395 |
C232F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 396 |
C233F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
| 397 |
CDBD1550A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common anode. |
Comchip Technology |
| 398 |
CDBD1550C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common cathod. |
Comchip Technology |
| 399 |
CDBD1550D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Double. |
Comchip Technology |
| 400 |
CM1000 |
50 V, 10 A, high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 401 |
CM1500 |
50 V, 15 A, high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 402 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 403 |
CM2500 |
50 V, 25 A, high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 404 |
CM3500 |
50 V, 35 A, high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 405 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
| 406 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 407 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
| 408 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 409 |
CP1000 |
50 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 410 |
CP300 |
50 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 411 |
CP600 |
50 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 412 |
CP800 |
50 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 413 |
CZRC5383B |
5.0 watt surface mount zener diode. Nom zener voltage 150 V. Tolerance +-5 %. |
Comchip Technology |
| 414 |
D5001R803R3P |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 415 |
D5001R803R3PA |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
| 416 |
DF005 |
50 V, 1 A, bridge rectifier |
Leshan Radio Company |
| 417 |
DF101 |
50 V, 1 A, bridge rectifier |
Leshan Radio Company |
| 418 |
DF101-S |
50 V, 1 A, bridge rectifier |
Leshan Radio Company |
| 419 |
DI100 |
50 V, 1 A dual-in-line glass passivated single-phase silicon bridge rectifier |
Invac |
| 420 |
DI100 |
50 V, 1 A, dual-in-line glass passivated single-phase bridge rectifier |
TRANSYS Electronics Limited |
| | | |
