| No. |
Part Name |
Description |
Manufacturer |
| 391 |
IDT74FST16163232PF |
16-bit synchronous 2:1 mux/demux switch |
IDT |
| 392 |
IDT74FST16163232PV |
16-bit synchronous 2:1 mux/demux switch |
IDT |
| 393 |
IDT74FST163232 |
16-Bit Synchronous 2:1 MUX/DEMUX Switch |
IDT |
| 394 |
IDT74FST163232PA |
16-Bit Synchronous 2:1 MUX/DEMUX Switch |
IDT |
| 395 |
IDT74FST163232PA8 |
16-Bit Synchronous 2:1 MUX/DEMUX Switch |
IDT |
| 396 |
IDT74FST163232PF |
16-BIT SYNCHRONOUS 2:1 MUX/DEMUX SWITCH |
IDT |
| 397 |
IDT74FST163232PV |
16-Bit Synchronous 2:1 MUX/DEMUX Switch |
IDT |
| 398 |
IDT74FST163232PV8 |
16-Bit Synchronous 2:1 MUX/DEMUX Switch |
IDT |
| 399 |
IDT74FST163233 |
16-Bit Synchronous 2:1 Mux/Demux Switch |
IDT |
| 400 |
IDT74FST163233PA |
16-Bit Synchronous 2:1 Mux/Demux Switch |
IDT |
| 401 |
IDT74FST163233PA8 |
16-Bit Synchronous 2:1 Mux/Demux Switch |
IDT |
| 402 |
IDT74FST163233PV |
16-Bit Synchronous 2:1 Mux/Demux Switch |
IDT |
| 403 |
IDT74FST163233PV8 |
16-Bit Synchronous 2:1 Mux/Demux Switch |
IDT |
| 404 |
IMP-16A_521D |
+5v,-12V, 16-bit standard instruction SET, MOS/LSI control and read only memory unit (CROM) |
National Semiconductor |
| 405 |
IS93C66-3 |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 406 |
IS93C66-3G |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 407 |
IS93C66-3GI |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 408 |
IS93C66-3GR |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 409 |
IS93C66-3GRI |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 410 |
IS93C66-3P |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 411 |
IS93C66-3PI |
4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 412 |
ISO809P |
Isolated 16-Bit Sampling ANALOG-TO-DIGITAL CONVERTER |
Burr Brown |
| 413 |
K7A203600 |
64Kx36-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 414 |
K7A203600A |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) |
Samsung Electronic |
| 415 |
K7A403601M |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 416 |
K7A403609A |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 417 |
K7B203625A |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999) |
Samsung Electronic |
| 418 |
K7B403625M |
128K x 36-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 419 |
KM616FS4110ZI-10 |
100ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 420 |
KM616FS4110ZI-7 |
70ns; V(cc): -2 to +3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
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