| No. |
Part Name |
Description |
Manufacturer |
| 391 |
MAX5084 |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 392 |
MAX5084ATT+ |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 393 |
MAX5084ATT+T |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 394 |
MAX5085 |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 395 |
MAX5085ATT+ |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 396 |
MAX5085ATT+T |
65V, 200mA, Low-Quiescent-Current Linear Regulators in TDFN |
MAXIM - Dallas Semiconductor |
| 397 |
MCE-6E8F-Z01 |
650 NM LASER DIODE |
etc |
| 398 |
MCT3A65P100F2 |
65A / 1000V / P-Type MOS-Controlled Thyristor (MCT) |
Intersil |
| 399 |
MCT3D65P100F2 |
65A / 1000V / P-Type MOS-Controlled Thyristor (MCT) |
Intersil |
| 400 |
MCTA65P100F1 |
65A / 1000V P-Type MOS Controlled Thyristor (MCT) |
Intersil |
| 401 |
MCTA65P100F113 |
65A, 1000V P-Type MOS Controlled Thyristor |
Intersil |
| 402 |
MCTV65P100F1 |
65A / 1000V P-Type MOS Controlled Thyristor (MCT) |
Intersil |
| 403 |
MMN4164 |
65536-BIT Dynamic Random Access Memory |
Microelectronica |
| 404 |
MMN4164 |
65536x1 bit dynamic RAM |
Microelectronica |
| 405 |
MMN4164-1 |
65536-BIT Dynamic Random Access Memory |
Microelectronica |
| 406 |
MMN4164-2 |
65536-BIT Dynamic Random Access Memory |
Microelectronica |
| 407 |
MMN4164-3 |
65536-BIT Dynamic Random Access Memory |
Microelectronica |
| 408 |
MMN4164-4 |
65536-BIT Dynamic Random Access Memory |
Microelectronica |
| 409 |
MN4264 |
65536 Bit NMOS Dynamic RAM |
Matsushita Electric Works(Nais) |
| 410 |
MR1260 |
650A 50V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 411 |
MR1260R |
650A 50V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 412 |
MR1261 |
650A 100V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 413 |
MR1261R |
650A 100V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 414 |
MR1262 |
650A 150V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 415 |
MR1262R |
650A 150V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 416 |
MR1263 |
650A 200V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 417 |
MR1263R |
650A 200V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 418 |
MR1265 |
650A 300V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 419 |
MR1265R |
650A 300V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 420 |
MR1267 |
650A 400V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
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