| No. |
Part Name |
Description |
Manufacturer |
| 391 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 392 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 393 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 394 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 395 |
1N991 |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 396 |
1N991A |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 397 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 398 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 399 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 400 |
2SC2841 |
Si NPN triple diffused mesa. High speed power switching. |
Panasonic |
| 401 |
2SD1168 |
Si NPN triple diffused mesa. Switching regulator. |
Panasonic |
| 402 |
2SD1171 |
Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. |
Panasonic |
| 403 |
2SD1175 |
Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. |
Panasonic |
| 404 |
2SD1291 |
Si NPN triple diffused mesa. Horizontal deflection output for color TV set. |
Panasonic |
| 405 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 406 |
2SD389 |
Si NPN diffused juction mesa. Medium power amplifier. |
Panasonic |
| 407 |
2SD389A |
Si NPN diffused juction mesa. Medium power amplifier. |
Panasonic |
| 408 |
2SD649 |
Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. |
Panasonic |
| 409 |
2SD691 |
Si NPN diffused junction mesa. High power amplifier. |
Panasonic |
| 410 |
2SD692 |
Si NPN diffused junction mesa. High power amplifier. |
Panasonic |
| 411 |
2SD693 |
Si NPN triple diffused mesa. High power switching. |
Panasonic |
| 412 |
2SD804 |
Si NPN triple diffused junction mesa. Power amplifier. |
Panasonic |
| 413 |
2SD849 |
Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. |
Panasonic |
| 414 |
2SD850 |
Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. |
Panasonic |
| 415 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 416 |
A-151B |
Shape and dimensions D.A.T.A. package |
SESCOSEM |
| 417 |
A-151c |
Shape and dimensions D.A.T.A. package |
SESCOSEM |
| 418 |
A-151d |
Shape and dimensions D.A.T.A. package |
SESCOSEM |
| 419 |
A-153g |
Shape and dimensions D.A.T.A. package |
SESCOSEM |
| 420 |
A-153h |
Shape and dimensions D.A.T.A. package |
SESCOSEM |
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