| No. |
Part Name |
Description |
Manufacturer |
| 391 |
B1086T-2.9 |
2.9V 1.5A low dropout voltage regulator |
BayLinear |
| 392 |
B1086T-3.3 |
3.3V 1.5A low dropout voltage regulator |
BayLinear |
| 393 |
B1086T-ADJ |
Adjustable 1.5A low dropout voltage regulator |
BayLinear |
| 394 |
B109D |
Operational amplifier |
RFT |
| 395 |
B109D |
Operational Amplifier, possibly equivalent µA709PC |
RFT |
| 396 |
B10A100VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 397 |
B10A45V |
SCHOTTKY BARRIER TYPE DIODE (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
| 398 |
B10A45VI |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 399 |
B10A45VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 400 |
B10A60 |
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
| 401 |
B10A60VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 402 |
B10A90VIC |
Schottky Barrier Diode |
Korea Electronics (KEC) |
| 403 |
B10S |
SMD Genenal Purpose Bridge Rectifier |
Comchip Technology |
| 404 |
B10S |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE MINI SURFACE MOUNT BRIDGE RECTIFIER |
DC Components |
| 405 |
B10S |
Glass passivated type |
Formosa MS |
| 406 |
B10S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 407 |
B10S-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
| 408 |
B10S-HF |
Halogen Free Bridge Rectifiers, VRRM=1000V, VDC=1000V, IAV=0.8A |
Comchip Technology |
| 409 |
B10SGS |
SMD Genenal Purpose Bridge Rectifier |
Comchip Technology |
| 410 |
BB100 |
Variable capacitance diode |
SESCOSEM |
| 411 |
BB100G |
Variable capacitance diode |
SESCOSEM |
| 412 |
BB101C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 413 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 414 |
BB101C |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 415 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 416 |
BB101M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 417 |
BB101M |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 418 |
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 419 |
BB102C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 420 |
BB102M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
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