No. |
Part Name |
Description |
Manufacturer |
391 |
SB360 |
SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
392 |
SB360 |
Bridge: Standard |
Taiwan Semiconductor |
393 |
SB360 |
60 V, 3 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
394 |
SB360 |
3 AMPERE SCHOTTKY BARRIER RECTIFIERS |
TRSYS |
395 |
SB360 |
Schottky Barrier Rectifier, Forward Current 3.0A, Reverse Voltage 60V |
Vishay |
396 |
SB360 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
397 |
SB360 |
SCHOTTKY BARRIER RECTIFER |
Zowie Technology Corporation |
398 |
SB360-G |
Schottky Barrier Rectifiers Diodes, VRRM=60V, VR=60V, IO=3A |
Comchip Technology |
399 |
SB360-T |
Through-Hole Schottky Rectifiers |
Diodes |
400 |
SB360-T3 |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
401 |
SB360-TB |
3.0A SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
402 |
SB360D |
60 V, 3 A, DPAK surface mount schottky barrier rectifier |
TRANSYS Electronics Limited |
403 |
SB360D |
DPAK SURFACE MOUNT SCHOTTKYBARRIER RECTIFIER |
TRSYS |
404 |
SB360E-G |
Schottky Barrier Rectifiers Diodes, VRRM=60V, VR=60V, IO=3A |
Comchip Technology |
405 |
SB360G |
Bridge: Standard |
Taiwan Semiconductor |
406 |
SB360S |
SCHOTTKY BARRIER RECTIFIER DIODES |
EIC discrete Semiconductors |
407 |
SB360S |
Schottky Barrier Rectifier Forward Current 3.0A |
Vishay |
408 |
SMAB36 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
409 |
SMBB36 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
410 |
SMCB36 |
Schottky Barrier Diode |
Korea Electronics (KEC) |
411 |
STB36NF02L |
N-CHANNEL 20V - 0.016 W - 36A D 2 PAK LOW GATE CHARGE STripFET POWER MOSFET |
SGS Thomson Microelectronics |
412 |
STB36NF02L |
N-CHANNEL 20V - 0.016 OHM - 36A - D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
413 |
STB36NF03L |
N - CHANNEL 30V - 0.015 Ohms - 36A D 2 PAK LOW GATE CHARGE STripFET POWER MOSFET |
SGS Thomson Microelectronics |
414 |
STB36NF03L |
N-CHANNEL 30V - 0.015 OHM - 36A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
415 |
STB36NF03L |
N-CHANNEL 30V - 0.015 OHM - 36A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
416 |
STB36NF03LT4 |
N-CHANNEL 30V - 0.015 OHM - 36A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET |
ST Microelectronics |
417 |
STB36NF06L |
N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
418 |
STB36NF06LT4 |
N-CHANNEL 60V - 0.032 OHM - 30A D2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
419 |
STB36NM60N |
Automotive-grade N-channel 600 V, 0.092 Ohm typ., 29 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
420 |
STB36NM60ND |
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
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