| No. |
Part Name |
Description |
Manufacturer |
| 391 |
BD82061FVJ-LBE2 |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 392 |
BD82065FVJ |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 393 |
BD82065FVJ-E2 |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 394 |
BD82065FVJ-LB |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 395 |
BD82065FVJ-LBE2 |
1ch High Side Switch ICs for USB Devices and Memory Cards |
ROHM |
| 396 |
BDY26 |
NPN SILICON TRANSISTORS DIFFUSED MESA |
Comset Semiconductors |
| 397 |
BDY28 |
NPN SILICON TRANSISTORS DIFFUSED MESA |
Comset Semiconductors |
| 398 |
BDY53 |
NPN SILICON TRANSISTORS DIFFUSED MESA |
Comset Semiconductors |
| 399 |
BDY55 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 400 |
BDY56 |
NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) |
Comset Semiconductors |
| 401 |
BDY57 |
NPN SILICON TRANSISTORS DIFFUSED MESA |
Comset Semiconductors |
| 402 |
BDY58 |
NPN SILICON TRANSISTORS DIFFUSED MESA |
Comset Semiconductors |
| 403 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 404 |
BGA6289 |
MMIC wideband medium power amplifier |
NXP Semiconductors |
| 405 |
BGA6289 |
BGA6289; MMIC wideband medium power amplifier |
Philips |
| 406 |
BGA6289 |
MMIC wideband medium power amplifier |
Philips |
| 407 |
BGA6489 |
MMIC wideband medium power amplifier |
NXP Semiconductors |
| 408 |
BGA6489 |
BGA6489; MMIC wideband medium power amplifier |
Philips |
| 409 |
BGA6489 |
MMIC wideband medium power amplifier |
Philips |
| 410 |
BGA6589 |
MMIC wideband medium power amplifier |
NXP Semiconductors |
| 411 |
BGA6589 |
MMIC wideband medium power amplifier |
Philips |
| 412 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 413 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 414 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 415 |
BSM100GT120DN2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 416 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 417 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 418 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 419 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 420 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| | | |
