| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 392 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 393 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 394 |
2SC3419 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 395 |
2SC3420 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 396 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 397 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 398 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 399 |
2SC4015 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 400 |
2SC4037 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 401 |
2SC4132 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 402 |
2SC4505 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 403 |
2SC4620 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 404 |
2SC4672 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 405 |
2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 406 |
2SC4682 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 407 |
2SC4684 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 408 |
2SC4781 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 409 |
2SC484 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 410 |
2SC485 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 411 |
2SC486 |
Silicon NPN triple diffused MESA medium power transistor |
TOSHIBA |
| 412 |
2SC495 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 413 |
2SC496 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 414 |
2SC497 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 415 |
2SC498 |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 416 |
2SC5001 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 417 |
2SC5030 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE STROBE FLASH AND MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 418 |
2SC5053 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 419 |
2SC5060 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 420 |
2SC509 |
Silicon NPN epitaxial planar medium power transistor, complementary to 2SA509 |
TOSHIBA |
| | | |
