| No. |
Part Name |
Description |
Manufacturer |
| 391 |
1S2094 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 392 |
1S2095A |
Silicon epitaxial planar type diode. |
Panasonic |
| 393 |
1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE |
TOSHIBA |
| 394 |
1S2186 |
Silicon epitaxial planar type diode. |
Panasonic |
| 395 |
1S2186 |
SILICON EPITAXIAL PLANAR TYPE |
TOSHIBA |
| 396 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 397 |
1S2236 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 398 |
1S2236 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
| 399 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 400 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch |
Hitachi Semiconductor |
| 401 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 402 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 403 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 404 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 405 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 406 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 407 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 408 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 409 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 410 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 411 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 412 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 413 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 414 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 415 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 416 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 417 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 418 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 419 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 420 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| | | |
