| No. |
Part Name |
Description |
Manufacturer |
| 391 |
BDY81 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 392 |
BDY82 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 393 |
BDY83 |
PNP silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 394 |
BF3506TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
SGS Thomson Microelectronics |
| 395 |
BF3506TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
ST Microelectronics |
| 396 |
BF3510TV |
FULL 50-60Hz RECTIFICATION BRIDGE |
SGS Thomson Microelectronics |
| 397 |
BF3510TV |
FULL 50-60HZ RECTIFICATION BRIDGE |
ST Microelectronics |
| 398 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 399 |
BFW45 |
Video Amplification NPN Transistor |
CCSIT-CE |
| 400 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 401 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 402 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 403 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 404 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 405 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 406 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 407 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 408 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 409 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 410 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 411 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 412 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 413 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 414 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 415 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 416 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 417 |
BM1R00001F |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 418 |
BM1R00001F-E2 |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 419 |
BM1R00002F |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 420 |
BM1R00002F-E2 |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
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