| No. |
Part Name |
Description |
Manufacturer |
| 391 |
FTD2008 |
Nch+Nch |
SANYO |
| 392 |
FTD2011 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 393 |
FTD2011A |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
| 394 |
FTD2012 |
N- Channel Silicon MOS FET Load S/W USE |
SANYO |
| 395 |
FTD2013 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 396 |
FTD2014 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 397 |
FTD2015 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 398 |
FTD2017 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 399 |
FTD2017A |
Nch+Nch |
SANYO |
| 400 |
FTD2019 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 401 |
FTD2019A |
Nch+Nch |
SANYO |
| 402 |
FTD2022 |
N-Channel Silicon MOSFET Load Switching Applications |
SANYO |
| 403 |
FTD7003 |
Pch+Pch |
SANYO |
| 404 |
FTD8002 |
Nch+Nch |
SANYO |
| 405 |
FTD8004 |
Nch+Nch |
SANYO |
| 406 |
FTD8005 |
Nch+Nch |
SANYO |
| 407 |
FTD8007 |
Nch+Nch |
SANYO |
| 408 |
HM5112805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 409 |
HM5113805FTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 410 |
LTI202FTD |
200 V doubler 10-12.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 411 |
LTI202UFTD |
200 V doubler 10-12.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 412 |
LTI206FTD |
600 V doubler 10-12.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 413 |
LTI206UFTD |
600 V doubler 10-12.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 414 |
LTI210FTD |
1000 V doubler 10-12.5 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 415 |
LTI210UFTD |
1000 V doubler 10-12.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
| | | |
