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Datasheets for GAN

Datasheets found :: 2547
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
No. Part Name Description Manufacturer
391 DC35GN-15-Q4 0.96 - 1.215GHz GaN Transistors Microsemi
392 DC35GN-15-Q4 1.2 - 1.4GHz GaN Transistors Microsemi
393 DC35GN-15-Q4 2.7 - 3.1GHz GaN Transistors Microsemi
394 DC35GN-15-Q4 3.1 - 3.5GHz GaN Transistors Microsemi
395 DC35GN-15-Q4 300-500MHz GaN Transistors Microsemi
396 DG1111C D_1111C Series, Ultra Compact InGaN/SiC SMT LED Stanley Electric
397 DMEGN-700V GaN Transistors Microsemi
398 E472 Super bright blue, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 20.0mcd(min), 90.0mcd(max). Forward voltage at 20mA: 4.5V(typ), 5.5V(max). Gilway Technical Lamp
399 E474 Super bright blue, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 60.0mcd(min), 150.0mcd(max). Forward voltage at 20mA: 4.5V(typ), 5.5V(max). Gilway Technical Lamp
400 E482 Mega bright blue, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 500mcd(min), 2000mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). Gilway Technical Lamp
401 E484 Mega bright blue, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 750mcd(min), 3000mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). Gilway Technical Lamp
402 E902 Mega bright green, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 2000mcd(min), 6800mcd(typ). Forward voltage at 20mA: 3.5V(typ), 4.0V(max). Gilway Technical Lamp
403 E903 Mega bright green, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 2500mcd(min), 10000mcd(typ). Forward voltage at 20mA: 3.5V(typ), 4.0V(max). Gilway Technical Lamp
404 EDE1104AASE 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
405 EDE1104AASE-4A-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
406 EDE1104AASE-5C-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
407 EDE1104AASE-6E-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
408 EDE1108AASE 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
409 EDE1108AASE-4A-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
410 EDE1108AASE-5C-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
411 EDE1108AASE-6E-E 1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. Elpida Memory
412 EXO-3 CRYSTAL OSCILLATOR FOR uPs WITH PROGRAMMBLE OUTPUT Wolfgang Knap
413 EXO-3-12.288M Crystal oscillator for uPs with programmable output, 12.288MHz Wolfgang Knap
414 EXO-3-14.31818M Crystal oscillator for uPs with programmable output, 14.31818MHz Wolfgang Knap
415 EXO-3-14.7456M Crystal oscillator for uPs with programmable output, 14.7456MHz Wolfgang Knap
416 EXO-3-14.91005M Crystal oscillator for uPs with programmable output, 14.9105MHz Wolfgang Knap
417 EXO-3-15.9744M Crystal oscillator for uPs with programmable output, 15.9744MHz Wolfgang Knap
418 EXO-3-16.128M Crystal oscillator for uPs with programmable output, 16.128MHz Wolfgang Knap
419 EXO-3-16.257M Crystal oscillator for uPs with programmable output, 16.257MHz Wolfgang Knap
420 EXO-3-16.384M Crystal oscillator for uPs with programmable output, 16.384MHz Wolfgang Knap


Datasheets found :: 2547
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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