No. |
Part Name |
Description |
Manufacturer |
391 |
DC35GN-15-Q4 0.96 - 1.215GHz |
GaN Transistors |
Microsemi |
392 |
DC35GN-15-Q4 1.2 - 1.4GHz |
GaN Transistors |
Microsemi |
393 |
DC35GN-15-Q4 2.7 - 3.1GHz |
GaN Transistors |
Microsemi |
394 |
DC35GN-15-Q4 3.1 - 3.5GHz |
GaN Transistors |
Microsemi |
395 |
DC35GN-15-Q4 300-500MHz |
GaN Transistors |
Microsemi |
396 |
DG1111C |
D_1111C Series, Ultra Compact InGaN/SiC SMT LED |
Stanley Electric |
397 |
DMEGN-700V |
GaN Transistors |
Microsemi |
398 |
E472 |
Super bright blue, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 20.0mcd(min), 90.0mcd(max). Forward voltage at 20mA: 4.5V(typ), 5.5V(max). |
Gilway Technical Lamp |
399 |
E474 |
Super bright blue, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 60.0mcd(min), 150.0mcd(max). Forward voltage at 20mA: 4.5V(typ), 5.5V(max). |
Gilway Technical Lamp |
400 |
E482 |
Mega bright blue, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 500mcd(min), 2000mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). |
Gilway Technical Lamp |
401 |
E484 |
Mega bright blue, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 750mcd(min), 3000mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). |
Gilway Technical Lamp |
402 |
E902 |
Mega bright green, T-1, GaN LED. Lens clear. Luminous intensity at 20mA: 2000mcd(min), 6800mcd(typ). Forward voltage at 20mA: 3.5V(typ), 4.0V(max). |
Gilway Technical Lamp |
403 |
E903 |
Mega bright green, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 2500mcd(min), 10000mcd(typ). Forward voltage at 20mA: 3.5V(typ), 4.0V(max). |
Gilway Technical Lamp |
404 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
405 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
406 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
407 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
408 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
409 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
410 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
411 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
412 |
EXO-3 |
CRYSTAL OSCILLATOR FOR uPs WITH PROGRAMMBLE OUTPUT |
Wolfgang Knap |
413 |
EXO-3-12.288M |
Crystal oscillator for uPs with programmable output, 12.288MHz |
Wolfgang Knap |
414 |
EXO-3-14.31818M |
Crystal oscillator for uPs with programmable output, 14.31818MHz |
Wolfgang Knap |
415 |
EXO-3-14.7456M |
Crystal oscillator for uPs with programmable output, 14.7456MHz |
Wolfgang Knap |
416 |
EXO-3-14.91005M |
Crystal oscillator for uPs with programmable output, 14.9105MHz |
Wolfgang Knap |
417 |
EXO-3-15.9744M |
Crystal oscillator for uPs with programmable output, 15.9744MHz |
Wolfgang Knap |
418 |
EXO-3-16.128M |
Crystal oscillator for uPs with programmable output, 16.128MHz |
Wolfgang Knap |
419 |
EXO-3-16.257M |
Crystal oscillator for uPs with programmable output, 16.257MHz |
Wolfgang Knap |
420 |
EXO-3-16.384M |
Crystal oscillator for uPs with programmable output, 16.384MHz |
Wolfgang Knap |
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