| No. |
Part Name |
Description |
Manufacturer |
| 391 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 392 |
2SK680 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 393 |
2SK680A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 394 |
2SK681 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 395 |
2SK681A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 396 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 397 |
34P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 398 |
35P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 399 |
36P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 400 |
37P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 401 |
AAY30 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 402 |
AAY32 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 403 |
AAY33 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 404 |
AAY48 |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 405 |
AAZ13 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 406 |
BAL74 |
SOT23 HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| 407 |
BAL99 |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| 408 |
BAL99(Z) |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
Diodes |
| 409 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 410 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 411 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 412 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 413 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 414 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 415 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 416 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 417 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 418 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 419 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 420 |
BAR74 |
SOT23 HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| | | |
