| No. |
Part Name |
Description |
Manufacturer |
| 391 |
1N6292A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 392 |
1N6293 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 393 |
1N6293A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 394 |
1N6294 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 395 |
1N6295 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 396 |
1N6295A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 397 |
1N6296 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 398 |
1N6296A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 399 |
1N6297 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 400 |
1N6297A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 401 |
1N6298 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 402 |
1N6298A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 403 |
1N6299 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 404 |
1N6299A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 405 |
1N6301A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 406 |
1N6302A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 407 |
1N6303 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 408 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 409 |
1N914 |
Silicon diodes, signal and fast rectification |
SESCOSEM |
| 410 |
1N914UR |
PERFORMANCE SPECIFICATION |
Microsemi |
| 411 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 412 |
20KHA20 |
HIGH FREQUENCY RECTIFICATION |
Nihon |
| 413 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
| 414 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 415 |
2N1039 |
Germanium transistor, medium power amplification |
COSEM |
| 416 |
2N1040 |
Germanium transistor, medium power amplification |
COSEM |
| 417 |
2N1041 |
Germanium transistor, medium power amplification |
COSEM |
| 418 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 419 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 420 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
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