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Datasheets for INDI

Datasheets found :: 4240
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No. Part Name Description Manufacturer
391 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
392 2N657 NPN SILICON PLANAR TRANSISTOR Continental Device India Limited
393 2N6705 0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
394 2N6707 0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
395 2N6708 0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
396 2N6709 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
397 2N6710 0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE Continental Device India Limited
398 2N6714 0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
399 2N6715 0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE Continental Device India Limited
400 2N6716 0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE Continental Device India Limited
401 2N6717 0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
402 2N6718 0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
403 2N6719 0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE Continental Device India Limited
404 2N6726 0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE Continental Device India Limited
405 2N6727 0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
406 2N6728 0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
407 2N6729 0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
408 2N6730 0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE Continental Device India Limited
409 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
410 2N697 0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited
411 2N699 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited
412 2N708 0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. Continental Device India Limited
413 2N718A 0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
414 2N720A 0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. Continental Device India Limited
415 2N915 0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. Continental Device India Limited
416 2N917 0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. Continental Device India Limited
417 2N918 0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. Continental Device India Limited
418 2N930 0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. Continental Device India Limited
419 2N930A 0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. Continental Device India Limited
420 2SA1015 Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. USHA India LTD


Datasheets found :: 4240
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