| No. |
Part Name |
Description |
Manufacturer |
| 391 |
BDX30-10 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 392 |
BDX30-6 |
PNP silicon power transistor for LF power amplifiers and switch applications |
Siemens |
| 393 |
BDY12 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 394 |
BDY12-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 395 |
BDY12-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 396 |
BDY12-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 397 |
BDY13 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 398 |
BDY13-10 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 399 |
BDY13-16 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 400 |
BDY13-6 |
NPN transistor for NF power amplifiers and switch applications |
Siemens |
| 401 |
BDY20 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 402 |
BF245A-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
| 403 |
BF770A |
RF-Bipolar - For IF amplifiers in TV-sat tuners and for VCR modulators |
Infineon |
| 404 |
BF770A |
NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators) |
Siemens |
| 405 |
BF771 |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 406 |
BF771 |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 407 |
BF771W |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 408 |
BF771W |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 409 |
BF775A |
NPN Silicon RF Transistor (Especially suitable for amplifiers and TV-sat tuners) |
Siemens |
| 410 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 411 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 412 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 413 |
BFG19 |
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |
Siemens |
| 414 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 415 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 416 |
BFG194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 417 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 418 |
BFG196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 419 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 420 |
BFG19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
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