| No. |
Part Name |
Description |
Manufacturer |
| 391 |
ASY57N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 392 |
ASY58N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 393 |
ASY59N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 394 |
ASY63N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 395 |
ASY76 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 396 |
ASY77 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 397 |
ASY80 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 398 |
ASZ15 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 399 |
ASZ16 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 400 |
ASZ17 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 401 |
ASZ18 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 402 |
AUY31 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 403 |
AUY32 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 404 |
BA100 |
Small signal silicon diode (alloyed) |
mble |
| 405 |
BA114 |
Silicon Alloyed Junction Diode |
Philips |
| 406 |
BF167 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 407 |
CS2082 |
Dual Airbag Deployment ASIC |
ON Semiconductor |
| 408 |
CS2082-D |
Dual Airbag Deployment ASIC |
ON Semiconductor |
| 409 |
CS2082EDW20 |
Dual Airbag Deployment ASIC |
ON Semiconductor |
| 410 |
CS2082EDWR20 |
Dual Airbag Deployment ASIC |
ON Semiconductor |
| 411 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 412 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 413 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 414 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 415 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 416 |
EB4 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 417 |
EB6 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 418 |
EB7 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 419 |
EB8 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 420 |
EFT212 |
Power TRANSISTOR Ge-ALLOY-pnp |
IPRS Baneasa |
| | | |
