No. |
Part Name |
Description |
Manufacturer |
391 |
KM44C4103CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
392 |
KM44C4103CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
393 |
KM44C4103CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
394 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
395 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
396 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
397 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
398 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
399 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
400 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
401 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
402 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
403 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
404 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
405 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
406 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
407 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
408 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
409 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
410 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
411 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
412 |
KM44C4105C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
413 |
KM44C4105CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
414 |
KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
415 |
KM44C4105CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
416 |
KM44C4105CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
417 |
KM44C4105CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
418 |
KM44C4105CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
419 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
420 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
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