| No. |
Part Name |
Description |
Manufacturer |
| 391 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 392 |
G6121 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 393 |
G6122 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 394 |
G6122-03 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 395 |
G6126 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 396 |
G6262 |
GaAsP photodiode |
Hamamatsu Corporation |
| 397 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 398 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 399 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 400 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 401 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 402 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 403 |
G7096 |
ULTRAFAST MSM PHOTODETECTORS |
Hamamatsu Corporation |
| 404 |
G7096-01 |
ULTRAFAST MSM PHOTODETECTORS |
Hamamatsu Corporation |
| 405 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 406 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 407 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 408 |
G7189 |
GaAsP photodiode |
Hamamatsu Corporation |
| 409 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 410 |
G7751-02 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 411 |
G7751-21 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 412 |
G7752-10 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 413 |
G7754-01 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 414 |
G7754-03 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 415 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 416 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 417 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
| 418 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 419 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
| 420 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
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