No. |
Part Name |
Description |
Manufacturer |
391 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
392 |
2N5298 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
393 |
2N5322 |
HIGH SPEED MEDIUM VOLTAGE SWITCHES |
SemeLAB |
394 |
2N5323 |
HIGH SPEED MEDIUM VOLTAGE SWITCHES |
SemeLAB |
395 |
2N5336 |
Medium Power NPN Transistor |
National Semiconductor |
396 |
2N5338 |
Medium Power NPN Transistor |
National Semiconductor |
397 |
2N5430 |
MEDIUM POWER NPN SILICON TRANSISTOR |
SemeLAB |
398 |
2N5490 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
399 |
2N5492 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
400 |
2N5494 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
401 |
2N5496 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
402 |
2N5810 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
403 |
2N5811 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
404 |
2N5812 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
405 |
2N5813 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
406 |
2N5814 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
407 |
2N5815 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
408 |
2N5816 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
409 |
2N5817 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
410 |
2N5818 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
411 |
2N5819 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
412 |
2N5820 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
413 |
2N5821 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
414 |
2N5822 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
415 |
2N5823 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
416 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
417 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
418 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
419 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
420 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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