| No. |
Part Name |
Description |
Manufacturer |
| 391 |
LZ402 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
| 392 |
MC146823Z |
V(dd): -0.3 to +8.0V; V(in): -0.5 to +0.5V; 10mA; ; CMOS: high-density, high-performance silicon gate |
Motorola |
| 393 |
MC74HC174A-D |
Hex D Flip-Flop with Common Clock and Reset High-Performance Silicon Gate CMOS |
ON Semiconductor |
| 394 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 395 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 396 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 397 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 398 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 399 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 400 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 401 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 402 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 403 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 404 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 405 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 406 |
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 407 |
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 408 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 409 |
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 410 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 411 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 412 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 413 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 414 |
MIC5460 |
2 expansion gates, 4 inputs each |
ITT Semiconductors |
| 415 |
MIC5460J |
2 expansion gates, 4 inputs each, ceramic housing |
ITT Semiconductors |
| 416 |
MIC5460N |
2 expansion gates, 4 inputs each, plastic housing |
ITT Semiconductors |
| 417 |
MIC7460 |
2 expansion gates, 4 inputs each |
ITT Semiconductors |
| 418 |
MIC7460J |
2 expansion gates, 4 inputs each, ceramic housing |
ITT Semiconductors |
| 419 |
MIC7460N |
2 expansion gates, 4 inputs each, plastic housing |
ITT Semiconductors |
| 420 |
MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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