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Datasheets for NSISTO

Datasheets found :: 90710
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
No. Part Name Description Manufacturer
391 2304 2.3GHz 4W 20V microwave power transistor for class C applications SGS Thomson Microelectronics
392 2307 7 W, 20 V, 2300 MHz common base transistor GHz Technology
393 2324-12L 12 W, 20 V, 2300-2400 MHz common base transistor GHz Technology
394 2324-20 20 W, 24 V, 2300-2400 MHz common base transistor GHz Technology
395 2324-5 5 W, 24 V, 2300-2400 MHz common base transistor GHz Technology
396 2327-1 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
397 2327-15 2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications SGS Thomson Microelectronics
398 2327-3 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
399 2327-5 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
400 23A003 0.3 W, 15 V, 2300 MHz common emitter transistor GHz Technology
401 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
402 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
403 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
404 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
405 2425-25 25 W, 24 V, 2410-2470 MHz common base transistor GHz Technology
406 2425GN-150CW GaN Transistors Microsemi
407 24N60C3 CoolMOS Power Transistor Infineon
408 25A1400-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC
409 2729GN-150 GaN Transistors Microsemi
410 2729GN-270 GaN Transistors Microsemi
411 2729GN-400 GaN Transistors Microsemi
412 2729GN-500 GaN Transistors Microsemi
413 2730GN-100L GaN Transistors Microsemi
414 2731GN-110M GaN Transistors Microsemi
415 2731GN-200M GaN Transistors Microsemi
416 2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
417 2AS1832F TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) TOSHIBA
418 2DA1201Y 120V PNP SILICON TRANSISTOR IN SOT89 Diodes
419 2DA1201Y-7 120V PNP SILICON TRANSISTOR IN SOT89 Diodes
420 2DA1201YQTC 120V PNP SILICON TRANSISTOR IN SOT89 Diodes


Datasheets found :: 90710
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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