No. |
Part Name |
Description |
Manufacturer |
391 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
392 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
393 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
394 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
395 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
396 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
397 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
398 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
399 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
400 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
401 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
402 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
403 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
404 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
405 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
406 |
2425GN-150CW |
GaN Transistors |
Microsemi |
407 |
24N60C3 |
CoolMOS Power Transistor |
Infineon |
408 |
25A1400-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
409 |
2729GN-150 |
GaN Transistors |
Microsemi |
410 |
2729GN-270 |
GaN Transistors |
Microsemi |
411 |
2729GN-400 |
GaN Transistors |
Microsemi |
412 |
2729GN-500 |
GaN Transistors |
Microsemi |
413 |
2730GN-100L |
GaN Transistors |
Microsemi |
414 |
2731GN-110M |
GaN Transistors |
Microsemi |
415 |
2731GN-200M |
GaN Transistors |
Microsemi |
416 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
417 |
2AS1832F |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
418 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
419 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
420 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
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