| No. |
Part Name |
Description |
Manufacturer |
| 391 |
MXP1022-Q |
Position Sensing Photo Detectors |
Microsemi |
| 392 |
MXP1022PS/Q |
Photovoltaic Detectors |
Microsemi |
| 393 |
MXP1023-PS |
Position Sensing Photo Detectors |
Microsemi |
| 394 |
MXP1023-Q |
Position Sensing Photo Detectors |
Microsemi |
| 395 |
MXP1023PS/Q |
Photovoltaic Detectors |
Microsemi |
| 396 |
NCP102 |
Low Dropout Linear Regulator Controller |
ON Semiconductor |
| 397 |
NCP1027 |
High−Voltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power |
ON Semiconductor |
| 398 |
NCP1028 |
High-Voltage Switcher for Medium Power offline SMPS featuring low standby power |
ON Semiconductor |
| 399 |
NTMSD2P102L |
FETKY® |
ON Semiconductor |
| 400 |
NTMSD2P102LR2 |
FETKY® |
ON Semiconductor |
| 401 |
NTMSD2P102LR2-D |
FETKY E Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 402 |
NTMSD3P102 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 403 |
NTMSD3P102R2 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 404 |
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 405 |
P102 |
600V 25A 2 SCR Traverse Bridge in a PACE-Pak package |
International Rectifier |
| 406 |
P102K |
600V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package |
International Rectifier |
| 407 |
P102KW |
600V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package |
International Rectifier |
| 408 |
P102W |
600V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package |
International Rectifier |
| 409 |
PHP1025 |
P-channel enhancement mode MOS transistor |
Philips |
| 410 |
Q62702-P102 |
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter |
Siemens |
| 411 |
Q62702-P1029 |
Silicon-PIN-Photodiode |
Siemens |
| 412 |
SBP1020T |
20 V, 10 A, schottky rectifier |
General Instruments |
| 413 |
SP102 |
Si Photodiode, possibly equivalent (BPX65) |
RFT |
| 414 |
TIP102 |
Power Darlingtons for Linear and Switching Applications |
Boca Semiconductor Corporation |
| 415 |
TIP102 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 416 |
TIP102 |
80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 417 |
TIP102 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 418 |
TIP102 |
8A N-P-N darlington power transistor. 100V, 80W, gain of 1000 at 3A. |
General Electric Solid State |
| 419 |
TIP102 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 420 |
TIP102 |
POWER TRANSISTORS(8A,60-100V,80W) |
MOSPEC Semiconductor |
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