No. |
Part Name |
Description |
Manufacturer |
391 |
HEF4505BF |
64-bit, 1-bit per word random access read/write memory |
Philips |
392 |
HEF4505BN |
64-bit, 1-bit per word random access read/write memory |
Philips |
393 |
HEF4505BP |
64-bit, 1-bit per word random access read/write memory |
Philips |
394 |
HEF4505BPB |
64-bit, 1-bit per word random access read/write memory |
Philips |
395 |
HEF4720 |
256-bit, 1-bit per word random access memories |
Philips |
396 |
HEF4720B |
256-bit, 1-bit per word random access memories |
Philips |
397 |
HEF4720BD |
256-bit, 1-bit per word random access memories |
Philips |
398 |
HEF4720BF |
256-bit, 1-bit per word random access memories |
Philips |
399 |
HEF4720BN |
256-bit, 1-bit per word random access memories |
Philips |
400 |
HEF4720BP |
256-bit, 1-bit per word random access memories |
Philips |
401 |
HEF4720BT |
256-bit, 1-bit per word random access memories |
Philips |
402 |
HEF4720V |
256-bit, 1-bit per word random access memories |
Philips |
403 |
HEF4720VD |
256-bit, 1-bit per word random access memories |
Philips |
404 |
HEF4720VF |
256-bit, 1-bit per word random access memories |
Philips |
405 |
HEF4720VN |
256-bit, 1-bit per word random access memories |
Philips |
406 |
HEF4720VP |
256-bit, 1-bit per word random access memories |
Philips |
407 |
HEF4720VT |
256-bit, 1-bit per word random access memories |
Philips |
408 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
409 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
410 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
411 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
412 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
413 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
414 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
415 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
416 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
417 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
418 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
419 |
HM514260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
420 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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