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Datasheets for REFRE

Datasheets found :: 1046
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |
No. Part Name Description Manufacturer
391 KM416C254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic
392 KM416C254DTL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh Samsung Electronic
393 KM416C256DLJ-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Samsung Electronic
394 KM416C256DLJ-6 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability Samsung Electronic
395 KM416C256DLJ-7 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability Samsung Electronic
396 KM416C256DLT-5 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability Samsung Electronic
397 KM416C256DLT-6 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability Samsung Electronic
398 KM416C256DLT-7 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability Samsung Electronic
399 KM416C4000BS-45 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns Samsung Electronic
400 KM416C4000BS-5 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns Samsung Electronic
401 KM416C4000BS-6 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns Samsung Electronic
402 KM416C4000CS-5 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns Samsung Electronic
403 KM416C4000CS-6 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns Samsung Electronic
404 KM416C4004CS-5 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns Samsung Electronic
405 KM416C4004CS-6 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns Samsung Electronic
406 KM416C4100BS-45 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns Samsung Electronic
407 KM416C4100BS-5 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns Samsung Electronic
408 KM416C4100BS-6 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns Samsung Electronic
409 KM416C4100CS-5 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns Samsung Electronic
410 KM416C4100CS-6 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns Samsung Electronic
411 KM416C4104CS-5 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 50ns Samsung Electronic
412 KM416C4104CS-6 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns Samsung Electronic
413 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
414 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
415 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
416 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
417 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
418 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
419 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
420 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic


Datasheets found :: 1046
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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