No. |
Part Name |
Description |
Manufacturer |
391 |
MRF9130LR3 |
RF Power Field Effect Transistors |
Motorola |
392 |
MRF9130LSR3 |
GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
393 |
MRF9130LSR3 |
RF Power Field Effect Transistors |
Motorola |
394 |
MRF9135L |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
395 |
MRF9135L |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
396 |
MRF9135L |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
397 |
MRF9135L |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
398 |
MRF9135LR3 |
880 MHz, 135 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
399 |
MRF9135LR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
400 |
MRF9135LSR3 |
880 MHz, 135 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
401 |
MRF9135LSR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
402 |
MRF914 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
403 |
MRF914 |
NPN silicon high frequency transistor fT=4.5GHz/20mA |
Motorola |
404 |
MRF914 |
Trans GP BJT NPN 12V 0.04A 4-Pin TO-72 |
New Jersey Semiconductor |
405 |
MRF917T1 |
LOW NOISE HIGH FREQUENCY TRANSISTOR |
Motorola |
406 |
MRF9180 |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
407 |
MRF9180 |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
408 |
MRF9180 |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
409 |
MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
410 |
MRF9180S |
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
Motorola |
411 |
MRF9200LR3 |
N−Channel Enhancement−Mode Lateral MOSFETs |
Freescale (Motorola) |
412 |
MRF9200LR3 |
880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor |
Motorola |
413 |
MRF9200LSR3 |
N−Channel Enhancement−Mode Lateral MOSFETs |
Freescale (Motorola) |
414 |
MRF9200LSR3 |
880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor |
Motorola |
415 |
MRF9210 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
416 |
MRF9210 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
417 |
MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
418 |
MRF9210R3 |
RF Power Field Effect Transistor |
Motorola |
419 |
MRF927T1 |
LOW NOISE HIGH FREQUENCY TRANSISTOR |
Motorola |
420 |
MRF927T3 |
LOW NOISE HIGH FREQUENCY TRANSISTOR |
Motorola |
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