No. |
Part Name |
Description |
Manufacturer |
391 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
392 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
393 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
394 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
395 |
BAW78D |
General Purpose Diodes - Silicon Switching Diode for switching applications |
Infineon |
396 |
BAW79D |
General Purpose Diodes - Silicon Switching Diode for high-speed switching |
Infineon |
397 |
BAX14 |
General purpose diode |
Philips |
398 |
BAX18 |
General purpose diode |
Philips |
399 |
BAX20 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
400 |
BAX21 |
Silicon epitaxial planar general purpose diodes |
AEG-TELEFUNKEN |
401 |
BAY44 |
Silicon general purpose diode with low reverse current |
Siemens |
402 |
BAY45 |
Silicon general purpose diode with low reverse current |
Siemens |
403 |
BAY46 |
Silicon general purpose diode with low reverse current |
Siemens |
404 |
BAY80 |
General purpose diode |
Philips |
405 |
BAY86 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
406 |
BAY87 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
407 |
BAY88 |
Diffused silicon general purpose diode |
AEG-TELEFUNKEN |
408 |
BAY89 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
409 |
BAY90 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
410 |
BAY91 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
411 |
BGX400 |
General Purpose Diodes - Silicon Switching Diode halfbridge rectifier |
Infineon |
412 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
413 |
BY164 |
General purpose diodes-bridged |
mble |
414 |
BY179 |
General purpose diodes-bridged |
mble |
415 |
BYP30-600 |
Fast recovery diode. Inverse diode for power transistors, invertor, UPS, snubber and clamping diode. Ifav = 30A, Vrrm = 600V. |
USHA India LTD |
416 |
CAB |
Case dimensions |
Motorola |
417 |
CMG02 |
General-purpose diode |
TOSHIBA |
418 |
CR1216 |
Lithium Manganese Dioxide Battery |
Unknow |
419 |
CR1616 |
Manganese Dioxide Lithium Coin Batteries |
EVE BATTERY |
420 |
CR1620 |
LITHIUM MANGANESE DIOXIDE BATTERY |
SONY |
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