| No. |
Part Name |
Description |
Manufacturer |
| 391 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 392 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 393 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 394 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 395 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 396 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 397 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 398 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 399 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 400 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 401 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 402 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 403 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 404 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 405 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 406 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 407 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 408 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 409 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 410 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 411 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 412 |
4040/6 |
Stand-off insulators with threaded terminals |
Vishay |
| 413 |
40600 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 414 |
40601 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 415 |
40602 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 416 |
40603 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 417 |
40604 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 418 |
40673 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, up to 400MHz |
RCA Solid State |
| 419 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
| 420 |
40821 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for Mixer |
RCA Solid State |
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