| No. |
Part Name |
Description |
Manufacturer |
| 391 |
AT60142ET-DD20MMQ |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 392 |
AT60142ET-DD20SMS |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
| 393 |
AUIR3200S |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
| 394 |
AUIR3200STR |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
| 395 |
AUIR3240S |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
| 396 |
AUIR3240STR |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
| 397 |
BA145 |
Fast recovery low power rectifier diode |
Mullard |
| 398 |
BA148 |
Fast recovery low power rectifier diode |
Mullard |
| 399 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 400 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 401 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 402 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 403 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 404 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 405 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 406 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 407 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 408 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 409 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 410 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 411 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 412 |
BAW32A |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 413 |
BAW32B |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 414 |
BAW32C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 415 |
BAW32D |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 416 |
BAW32E |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 417 |
BD616LV4017AC-55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
| 418 |
BD616LV4017AC-70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
| 419 |
BD616LV4017ACG55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
| 420 |
BD616LV4017ACG70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
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