| No. |
Part Name |
Description |
Manufacturer |
| 391 |
PMN50XP |
P-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 392 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 393 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 394 |
PMR290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 395 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 396 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 397 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 398 |
PMR370XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 399 |
PMR370XN |
PMR370XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 400 |
PMV31XN |
uTrenchMOS (tm) extremely low level FET |
Philips |
| 401 |
PMV31XN |
PMV31XN; uTrenchMOS (tm) extremely low level FET |
Philips |
| 402 |
PMV56XN |
PMV56XN; uTrenchmos (tm) extremely low level FET |
Philips |
| 403 |
PMV56XN |
uTrenchmos (tm) extremely low level FET |
Philips |
| 404 |
PMV65XP |
P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 405 |
PMV65XP |
PMV65XP; P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 406 |
PMWD20XN |
PMWD20XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 407 |
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET |
Philips |
| 408 |
PMZ250UN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 409 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 410 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 411 |
PZTA29 |
Applications requiring extremely high current gain at collector currents to 500mA |
Fairchild Semiconductor |
| 412 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 413 |
Q62702-C2479 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 414 |
Q62702-C2481 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 415 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 416 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 417 |
SMCSCONNECTOR |
Parallel Optical Links (PAROLI) - extremely short connector body |
Infineon |
| 418 |
STY16NA90 |
N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 419 |
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
| 420 |
TC1300 |
The TC1300 combines a Low Dropout Regulator and a Microprocessor Reset Monitor in a space-saving 8-Pin MSOP package. Total supply current is 80�A (typical), 20 to 60 times lower than in bipolar regulators. The TC1300 has an extremely preci |
Microchip |
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