| No. |
Part Name |
Description |
Manufacturer |
| 3931 |
BTA22D |
10-A SILICON TRIACS |
General Electric Solid State |
| 3932 |
BTA22E |
10-A SILICON TRIACS |
General Electric Solid State |
| 3933 |
BTA22M |
10-A SILICON TRIACS |
General Electric Solid State |
| 3934 |
BTA22N |
10-A SILICON TRIACS |
General Electric Solid State |
| 3935 |
BTA23 |
12-A SILICON TRIACS |
General Electric Solid State |
| 3936 |
BTA23B |
12-A SILICON TRIACS |
General Electric Solid State |
| 3937 |
BTA23C |
12-A SILICON TRIACS |
General Electric Solid State |
| 3938 |
BTA23D |
12-A SILICON TRIACS |
General Electric Solid State |
| 3939 |
BTA23E |
12-A SILICON TRIACS |
General Electric Solid State |
| 3940 |
BTA23M |
12-A SILICON TRIACS |
General Electric Solid State |
| 3941 |
BTA23N |
12-A SILICON TRIACS |
General Electric Solid State |
| 3942 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 3943 |
BU323A |
10 A N-P-N monollithic darlington power transistor. 400 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 3944 |
BU808 |
8 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 3945 |
BUK7107-40AIC |
V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering |
Philips |
| 3946 |
BUK7907-40AIC |
V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering |
Philips |
| 3947 |
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR |
General Electric Solid State |
| 3948 |
BUX14 |
SILICON NPN SWITCHING TRANSISTOR |
General Electric Solid State |
| 3949 |
BUX37 |
15 AMPERE NPN MONOLITHIC DARLINGTON POWER TRANSISTOR |
General Electric Solid State |
| 3950 |
BUX45 |
HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS |
General Electric Solid State |
| 3951 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| 3952 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 3953 |
BYW51-150 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V. |
General Electric Solid State |
| 3954 |
BYW51-200 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 200V. |
General Electric Solid State |
| 3955 |
C0G (NPO) DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Stable C0G Dielectric, Low Loss, Low DF, High Voltage Ratings, Ideal for Snubber and Surge Suppression Applications |
Vishay |
| 3956 |
C0G (NPO) DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Stable C0G Dielectric, Low Loss, Low DF, High Voltage Ratings, Ideal for Snubber and Surge Suppression Applications |
Vishay |
| 3957 |
C0G (NPO) DIELECTRIC, HIGH VOLTAGE |
Monolithic Ceramic Chip Capacitors, High Voltage, Ultra-Stable C0G Dielectric, Low Dissipation Factor, Ideal for Critical Timing and Tuning Applications |
Vishay |
| 3958 |
C0G (NPO) DIELECTRIC, HIGH VOLTAGE |
Monolithic Ceramic Chip Capacitors, High Voltage, Ultra-Stable C0G Dielectric, Low Dissipation Factor, Ideal for Critical Timing and Tuning Applications |
Vishay |
| 3959 |
C106A |
4A sensitive-gate silicon controlled rectifier. Vrrm 100V. |
General Electric Solid State |
| 3960 |
C106B |
4A sensitive-gate silicon controlled rectifier. Vrrm 200V. |
General Electric Solid State |
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