No. |
Part Name |
Description |
Manufacturer |
3931 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
3932 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
3933 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3934 |
2N5551CBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3935 |
2N5551CTA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3936 |
2N5551TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3937 |
2N5551TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3938 |
2N5551TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3939 |
2N5551TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3940 |
2N5551_J05Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3941 |
2N5551_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3942 |
2N5551_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
3943 |
2N5555 |
Leaded JFET General Purpose |
Central Semiconductor |
3944 |
2N5556 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
3945 |
2N5557 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
3946 |
2N5558 |
N-Channel FETs - General Purpose AMPS |
National Semiconductor |
3947 |
2N5561 |
General Purpose Dual JFETs |
National Semiconductor |
3948 |
2N5562 |
General Purpose Dual JFETs |
National Semiconductor |
3949 |
2N5563 |
General Purpose Dual JFETs |
National Semiconductor |
3950 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3951 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3952 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3953 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3954 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3955 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
3956 |
2N5582 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
3957 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
3958 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
3959 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
3960 |
2N5632 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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