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Datasheets for NTE

Datasheets found :: 137228
Page: | 128 | 129 | 130 | 131 | 132 | 133 | 134 | 135 | 136 |
No. Part Name Description Manufacturer
3931 2SC982 NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA
3932 2SC982TM Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications TOSHIBA
3933 2SC984 Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output Hitachi Semiconductor
3934 2SC984H Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier Hitachi Semiconductor
3935 2SD77AH Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output Hitachi Semiconductor
3936 2SD96 Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output Hitachi Semiconductor
3937 2SJ148 Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3938 2SJ167 Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3939 2SJ168 Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3940 2SK105 N-Channel silicon junction field-effect transistor InterFET Corporation
3941 2SK1061 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3942 2SK1062 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3943 2SK113 N-Channel silicon junction field-effect transistor InterFET Corporation
3944 2SK152 N-Channel silicon junction field-effect transistor InterFET Corporation
3945 2SK363 N-Channel silicon junction field-effect transistor InterFET Corporation
3946 2SK982 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications TOSHIBA
3947 2V010 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. NTE Electronics
3948 2V014 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 22 V @ 1mA DC test current. NTE Electronics
3949 2V015 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 24 V @ 1mA DC test current. NTE Electronics
3950 2V017 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 27 V @ 1mA DC test current. NTE Electronics
3951 2V020 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 33 V @ 1mA DC test current. NTE Electronics
3952 2V025 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 39 V @ 1mA DC test current. NTE Electronics
3953 2V030 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 47 V @ 1mA DC test current. NTE Electronics
3954 2V035 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 56 V @ 1mA DC test current. NTE Electronics
3955 2V040 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. NTE Electronics
3956 2V050 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 82 V @ 1mA DC test current. NTE Electronics
3957 2V060 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 100 V @ 1mA DC test current. NTE Electronics
3958 2V075 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 120 V @ 1mA DC test current. NTE Electronics
3959 2V095 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. NTE Electronics
3960 2V115 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. NTE Electronics


Datasheets found :: 137228
Page: | 128 | 129 | 130 | 131 | 132 | 133 | 134 | 135 | 136 |



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