| No. |
Part Name |
Description |
Manufacturer |
| 3931 |
TB31242FN |
Phase Lock Loop |
TOSHIBA |
| 3932 |
TB31245FN |
Phase Lock Loop |
TOSHIBA |
| 3933 |
TB31251FL |
Phase Lock Loop |
TOSHIBA |
| 3934 |
TB31356AFL |
Phase Lock Loop |
TOSHIBA |
| 3935 |
TC75W60FK |
General-Purpose Linear ICs |
etc |
| 3936 |
TC75W60FU |
General-Purpose Linear ICs |
etc |
| 3937 |
TCC20L25 |
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 3938 |
TCC20L25 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
ST Microelectronics |
| 3939 |
TCM850 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
| 3940 |
TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
| 3941 |
TCM852 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
| 3942 |
TCM853 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
| 3943 |
TFF1003HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3944 |
TFF1007HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3945 |
TFF11084HN |
Low phase noise LO generator |
NXP Semiconductors |
| 3946 |
TFF11086HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3947 |
TFF11092HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3948 |
TFF11094HN |
Low phase noise LO generator |
NXP Semiconductors |
| 3949 |
TFF11096HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3950 |
TFF11101HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3951 |
TFF11105HN |
Low phase noise LO generator |
NXP Semiconductors |
| 3952 |
TFF11115HN |
Low phase noise LO generator |
NXP Semiconductors |
| 3953 |
TFF11139HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3954 |
TFF11142HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3955 |
TFF11145HN |
Low phase noise LO generator for VSAT applications |
NXP Semiconductors |
| 3956 |
TFF11152HN |
Low phase noise LO generator |
NXP Semiconductors |
| 3957 |
TIL119 |
5V; 60mA non base lead optically coupled isolator photodarlington output |
ISOCOM |
| 3958 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 3959 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 3960 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| | | |
