| No. |
Part Name |
Description |
Manufacturer |
| 3961 |
RM400HA-20S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3962 |
RM400HA-20S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3963 |
RM400HA-24S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3964 |
RM400HA-24S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3965 |
RM400HV-34S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3966 |
RM400HV-34S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3967 |
RM50 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3968 |
RM50C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3969 |
RM50CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3970 |
RM50CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3971 |
RM50DA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3972 |
RM50DA-C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3973 |
RM50DA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3974 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 3975 |
RM50DA/CA/C1A-XXS |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3976 |
RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3977 |
RM50HG-12S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 3978 |
RM50HG-12S |
MITSUBISHI FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3979 |
RM50HG-12S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3980 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 3981 |
RN1241 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3982 |
RN1242 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3983 |
RN1243 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3984 |
RN1244 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3985 |
RN1301 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3986 |
RN1302 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3987 |
RN1303 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3988 |
RN1304 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3989 |
RN1305 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 3990 |
RN1306 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| | | |
