| No. |
Part Name |
Description |
Manufacturer |
| 3991 |
2SK2221 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 3992 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3993 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3994 |
2SK2394 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3995 |
2SK2395 |
N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications |
SANYO |
| 3996 |
2SK241 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications |
TOSHIBA |
| 3997 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 3998 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 3999 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 4000 |
2SK242 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 4001 |
2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 4002 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 4003 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4004 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4005 |
2SK2539 |
N-Channel Junction Silicon FET High-Frequency Amplifier, Analog Switch Applications |
SANYO |
| 4006 |
2SK2595 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 4007 |
2SK2596 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 4008 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 4009 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 4010 |
2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 4011 |
2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 4012 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4013 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 4014 |
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 4015 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 4016 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 4017 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 4018 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 4019 |
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 4020 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
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