| No. |
Part Name |
Description |
Manufacturer |
| 3991 |
SFH425 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
| 3992 |
SFH435 |
GaAs INFRARED EMITTER DOUBLE EMITTING DIODE |
Siemens |
| 3993 |
SFH4510 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
| 3994 |
SFH4515 |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm |
Siemens |
| 3995 |
SFH4552 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3996 |
SFH495P |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
Siemens |
| 3997 |
SGD102 |
C to X Band, Mixer, Modulator Applications GaAs Schottky Barrier Diode |
SANYO |
| 3998 |
SGF25 |
N-Channel GaAs MESFET |
SANYO |
| 3999 |
SGF29 |
GaAs MESFETs |
SANYO |
| 4000 |
SGF31 |
GaAs MESFETs |
SANYO |
| 4001 |
SGF33 |
GaAs MESFETs |
SANYO |
| 4002 |
SGF34 |
GaAs MESFETs |
SANYO |
| 4003 |
SGF35 |
GaAs MESFETs |
SANYO |
| 4004 |
SGM2013 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4005 |
SGM2013N |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4006 |
SGM2014 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 4007 |
SGM2014AM |
GaAs N-channel Dual Gate MES FET |
SONY |
| 4008 |
SGM2014AN |
GaAs N-channel Dual Gate MES FET |
SONY |
| 4009 |
SGM2014M |
GaAs N-channel Dual Gate MES FET |
SONY |
| 4010 |
SGM2016 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4011 |
SGM2016AM |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4012 |
SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4013 |
SGM2016AN |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4014 |
SGM2016AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4015 |
SGM2016M |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4016 |
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4017 |
SGM2016P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 4018 |
SHF-0186 |
DC-12 GHz, 0.5 watt AlGaAs/GaAs HFET |
Stanford Microdevices |
| 4019 |
SHF-0186K |
DC-3 GHz, 0.5 watt AlGaAs/GaAs HFET |
Stanford Microdevices |
| 4020 |
SHF-0189 |
DC-3 GHz, 0.5 watt GaAs HFET |
Stanford Microdevices |
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