| No. |
Part Name |
Description |
Manufacturer |
| 3991 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3992 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 3993 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3994 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3995 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 3996 |
GT5G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3997 |
GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3998 |
GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 3999 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4000 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4001 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4002 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 4003 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 4004 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 4005 |
HA17431 |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 4006 |
HA17431VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 4007 |
HA17431VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 4008 |
HA17432VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 4009 |
HA17432VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 4010 |
HB21000A6 |
Flash ATA card 1 GByte |
Hitachi Semiconductor |
| 4011 |
HCC40161BDG |
Rad-Hard Binary Counter with Asynchronous Clear |
ST Microelectronics |
| 4012 |
HCC40161BDT |
Rad-Hard Binary Counter with Asynchronous Clear |
ST Microelectronics |
| 4013 |
HCC40161BKG |
Rad-Hard Binary Counter with Asynchronous Clear |
ST Microelectronics |
| 4014 |
HCC40161BKT |
Rad-Hard Binary Counter with Asynchronous Clear |
ST Microelectronics |
| 4015 |
HD10132 |
Dual Multiplexers (with Latch and common Reset) |
Hitachi Semiconductor |
| 4016 |
HD74HC137 |
3-to-8-line Decoder/Demultiplexer with Address Latch |
Hitachi Semiconductor |
| 4017 |
HD74HC237 |
3-to-8-line Decoder/Demultiplexer with Address Latch |
Hitachi Semiconductor |
| 4018 |
HD74HCT137 |
3-to-8-line Decoder/Demultiplexer with Address Latch |
Hitachi Semiconductor |
| 4019 |
HD74HCT237 |
3-to-8-line Decoder/Demultiplexer with Address Latch |
Hitachi Semiconductor |
| 4020 |
HDC1010 |
HDC1010 Low Power, High Accuracy Digital Humidity Sensor with Temperature Sensor 8-DSBGA -40 to 125 |
Texas Instruments |
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