| No. |
Part Name |
Description |
Manufacturer |
| 4021 |
PTM1300FBEA |
166 MHz, Media processor |
Philips |
| 4022 |
PZTA14T1 |
SOT-223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
Motorola |
| 4023 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 4024 |
Q62702-A1103 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
| 4025 |
Q62702-A3461 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 4026 |
Q62702-A712 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 4027 |
Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 4028 |
Q62702-A920 |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Siemens |
| 4029 |
Q62702-A921 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
Siemens |
| 4030 |
Q62702-A922 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 4031 |
Q62702-D1258 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4032 |
Q62702-D1259 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4033 |
Q62702-D1267 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4034 |
Q62702-D1268 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4035 |
Q62702-D1275 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4036 |
Q62702-D1276 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4037 |
Q62702-D1284 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4038 |
Q62702-D1285 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
Siemens |
| 4039 |
Q62702-F1590 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 4040 |
Q62702-P3001 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 4041 |
Q62702-P3050 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 4042 |
Q62702-P3056 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 4043 |
Q62702-P3061 |
1300 nm Laser in Receptacle Package, Medium Power |
Siemens |
| 4044 |
Q62702A1178 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 4045 |
Q62702A1180 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 4046 |
Q62702D1345 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 4047 |
Q62702D1346 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
Siemens |
| 4048 |
QM100HY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 4049 |
QM10HA-HB |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 4050 |
QM15DX-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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