| No. |
Part Name |
Description |
Manufacturer |
| 4021 |
K100F |
10000 V rectifier 1.5-3 A forward current, 200 ns recovery time |
Voltage Multipliers |
| 4022 |
K100S |
10000 V rectifier 1.5-3 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 4023 |
K100UF |
10000 V rectifier 1.5-3 A forward current, 100 ns recovery time |
Voltage Multipliers |
| 4024 |
K25S |
1.5A - 3.0A Forward Current / 3000 ns Recovery Time |
Voltage Multipliers |
| 4025 |
KAQV214A |
HIGH VOLTAGE, PHOTO EDMOS RELAY |
Cosmo Electronics |
| 4026 |
KAQW210TSB |
PHOTO MOS RELAYS |
etc |
| 4027 |
KAQW414A |
HIGH VOLTAGE, PHOTO MOS RELAY |
etc |
| 4028 |
KAQW414A |
HIGH VOLTAGE, PHOTO MOS RELAY |
etc |
| 4029 |
KK90GB |
Designed for various rectifier circuits and power controls |
SanRex |
| 4030 |
KLH1529 |
HIGH VOLTAGE PHOTO MOS RELAY |
Cosmo Electronics |
| 4031 |
KLH1529A |
HIGH VOLTAGE PHOTO MOS RELAY |
Cosmo Electronics |
| 4032 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 4033 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 4034 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 4035 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 4036 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 4037 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 4038 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 4039 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 4040 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 4041 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 4042 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 4043 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 4044 |
KM41C4000DJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 4045 |
KM41C4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 4046 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 4047 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 4048 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
| 4049 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 4050 |
KM41C4000DLT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
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