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Datasheets for PN EPITA

Datasheets found :: 5127
Page: | 133 | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 |
No. Part Name Description Manufacturer
4081 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4082 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4083 MMBT2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4084 MMBT4124 30 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4085 MMBT5088 35 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4086 MMBT5089 30 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4087 MMBT5550 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
4088 MMBT5550 160 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4089 MMBT6427 40 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4090 MMBT6428 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4091 MP4013 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4092 MP4020 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4093 MP4021 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4094 MP4024 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4095 MP4025 Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching TOSHIBA
4096 MP4101 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. TOSHIBA
4097 MP4104 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4098 MP4301 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4099 MP4303 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4100 MP4304 Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4101 MP4501 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4102 MP4502 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4103 MP4514 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4104 MPS2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4105 MPS2222A 75 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4106 MPS3704 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4107 MPS3705 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4108 MPS3706 40 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4109 MPS5172 25 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4110 MPS5179 20 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 5127
Page: | 133 | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 |



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