No. |
Part Name |
Description |
Manufacturer |
4081 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4082 |
MMBC1623L6 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4083 |
MMBT2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4084 |
MMBT4124 |
30 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4085 |
MMBT5088 |
35 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4086 |
MMBT5089 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4087 |
MMBT5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
4088 |
MMBT5550 |
160 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4089 |
MMBT6427 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4090 |
MMBT6428 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4091 |
MP4013 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4092 |
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4093 |
MP4021 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4094 |
MP4024 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4095 |
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching |
TOSHIBA |
4096 |
MP4101 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
4097 |
MP4104 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4098 |
MP4301 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4099 |
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4100 |
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4101 |
MP4501 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4102 |
MP4502 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4103 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
4104 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4105 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4106 |
MPS3704 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4107 |
MPS3705 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4108 |
MPS3706 |
40 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4109 |
MPS5172 |
25 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4110 |
MPS5179 |
20 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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