| No. |
Part Name |
Description |
Manufacturer |
| 4081 |
BC857BW-7-F |
Bipolar Transistors |
Diodes |
| 4082 |
BC857C |
Bipolar Transistors |
Diodes |
| 4083 |
BC857C |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4084 |
BC857C-7-F |
Bipolar Transistors |
Diodes |
| 4085 |
BC857CT |
Bipolar Transistors |
Diodes |
| 4086 |
BC857CT-7-F |
Bipolar Transistors |
Diodes |
| 4087 |
BC857CW |
Bipolar Transistors |
Diodes |
| 4088 |
BC857CW-7-F |
Bipolar Transistors |
Diodes |
| 4089 |
BC858A |
Bipolar Transistors |
Diodes |
| 4090 |
BC858A |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4091 |
BC858A-7-F |
Bipolar Transistors |
Diodes |
| 4092 |
BC858AW |
Bipolar Transistors |
Diodes |
| 4093 |
BC858AW-7-F |
Bipolar Transistors |
Diodes |
| 4094 |
BC858B |
Bipolar Transistors |
Diodes |
| 4095 |
BC858B |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 4096 |
BC858B |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4097 |
BC858B-7-F |
Bipolar Transistors |
Diodes |
| 4098 |
BC858BW |
Bipolar Transistors |
Diodes |
| 4099 |
BC858BW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 4100 |
BC858BW-7-F |
Bipolar Transistors |
Diodes |
| 4101 |
BC858C |
Bipolar Transistors |
Diodes |
| 4102 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 4103 |
BC858C |
Discrete Devices-Transistor-PNP Bipolar Transistor |
Taiwan Semiconductor |
| 4104 |
BC858C-7-F |
Bipolar Transistors |
Diodes |
| 4105 |
BC858CW |
Bipolar Transistors |
Diodes |
| 4106 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4107 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4108 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4109 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4110 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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