| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
T2316405A-60 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4112 |
T2316405A-70 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4113 |
T2316407A |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4114 |
T2316407A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 4115 |
T2316407A-10 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4116 |
T2316407A-50 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4117 |
T2316407A-60 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4118 |
T2316407A-70 |
4M x 4 DYNAMIC RAM EDO PAGE MODE |
Taiwan Memory Technology |
| 4119 |
T2316A |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 4120 |
T2316B |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 4121 |
T2316D |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 4122 |
T431616A |
1M x 16 SDRAM |
Taiwan Memory Technology |
| 4123 |
T431616A-7C |
1M x 16 SDRAM |
Taiwan Memory Technology |
| 4124 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 4125 |
T431616A-7CI |
1M x 16 SDRAM |
Taiwan Memory Technology |
| 4126 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 4127 |
T431616A-7S |
1M x 16 SDRAM |
Taiwan Memory Technology |
| 4128 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 4129 |
T431616A-7SI |
1M x 16 SDRAM |
Taiwan Memory Technology |
| 4130 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
| 4131 |
TA1316AN |
YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV |
TOSHIBA |
| 4132 |
TA8316AS |
IGBT GATE DRIVER |
TOSHIBA |
| 4133 |
TC55VBM316AFTN |
SRAM - Low Power |
TOSHIBA |
| 4134 |
TC55VBM316AFTN40 |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM |
TOSHIBA |
| 4135 |
TC55VBM316AFTN55 |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM |
TOSHIBA |
| 4136 |
TC55VBM316ASTN |
SRAM - Low Power |
TOSHIBA |
| 4137 |
TC55VBM316ASTN40 |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM |
TOSHIBA |
| 4138 |
TC55VBM316ASTN55 |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM |
TOSHIBA |
| 4139 |
TC55VEM316AXBN |
SRAM - Low Power |
TOSHIBA |
| 4140 |
TC55VEM316AXBN40 |
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM |
TOSHIBA |
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