| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
MRA364 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
| 4112 |
MRD250 |
NPN silicon photo detector designed for application in card and tape readers, pattern and character recognition and shaft encoders |
Motorola |
| 4113 |
MRD300 |
NPN silicon high sensitivity photo transistor designed for application in industrial inspection, processing and control, counters, sorters |
Motorola |
| 4114 |
MRF216 |
40W - 175MHz Controlled RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 4115 |
MRF225 |
1.5W - 225 MHz RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 4116 |
MRF247 |
Application Note - A simplified approach to VHF power amplifier design |
Motorola |
| 4117 |
MRF402 |
NPN silicon RF power transistor 1.0W, 50MHz, designed for 12.5V |
Motorola |
| 4118 |
MRF475 |
Application Note - Low-distortion1.6 to 30MHz SSB driver designs |
Motorola |
| 4119 |
MRF476 |
Application Note - Low-distortion1.6 to 30MHz SSB driver designs |
Motorola |
| 4120 |
MRF619 |
25W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 4121 |
MRF620 |
35W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
| 4122 |
MRF817 |
2.5W - 900MHz RF Power Transistor NPN Silicon designed for 13.6V |
Motorola |
| 4123 |
MRF844 |
Application Note - 30W, 800MHz amplifier design |
Motorola |
| 4124 |
MSC1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 4125 |
MSC1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 4126 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 4127 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 4128 |
MSC80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 4129 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 4130 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 4131 |
MSC81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 4132 |
MSC81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 4133 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 4134 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 4135 |
MSC81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 4136 |
MSC81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 4137 |
MSD6101 |
Silicon epitaxial dual discriminator diode designed for use in FM discriminator applications |
Motorola |
| 4138 |
MSD6102 |
Silicon epitaxial dual diode designed for use as a horizontal phase detector for television receivers |
Motorola |
| 4139 |
MSD6150 |
Silicon epitaxial dual diode designed for consumer applications |
Motorola |
| 4140 |
MSP430BT5190 |
16-bit Microcontroller designed for use with CC2560 TI Bluetooth? Based Solutions 113-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
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