| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
TDA18250BHN |
Cable silicon tuner |
NXP Semiconductors |
| 4112 |
TDA18250HN |
Cable Silicon Tuner |
NXP Semiconductors |
| 4113 |
TDA18260HN |
Dual cable silicon tuner |
NXP Semiconductors |
| 4114 |
TFR1N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (fast recovery) |
TOSHIBA |
| 4115 |
TFR1T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (fast recovery) |
TOSHIBA |
| 4116 |
TFR2N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4117 |
TFR2T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4118 |
TFR3N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4119 |
TFR3T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4120 |
TFR4N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4121 |
TFR4T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4122 |
TFR7H |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4123 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4124 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4125 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4126 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4127 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4128 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4129 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4130 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4131 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4132 |
TN1215R |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.6@24AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 4133 |
TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 4134 |
TPS703 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4135 |
TPS704 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4136 |
TPS705 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4137 |
TPS706 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4138 |
TPS708 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4139 |
TPS721A |
PHOTODIODE SILICON PN |
TOSHIBA |
| 4140 |
TVR1B |
Fast Recovery Diode Silicon Diffused Type TV Applications (fast recovery) |
TOSHIBA |
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