No. |
Part Name |
Description |
Manufacturer |
4111 |
2SC14 |
High-Speed Switching Transistor |
TOSHIBA |
4112 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
4113 |
2SC1433 |
Silicon NPN triple diffused MESA transistor, high voltage switching applications |
TOSHIBA |
4114 |
2SC1434 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
4115 |
2SC1435 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
4116 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
4117 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
4118 |
2SC1545 |
High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors |
ROHM |
4119 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
4120 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
4121 |
2SC1560 |
NPN SILICON HIGH FREQUNY TRANSISTOR |
NEC |
4122 |
2SC1576 |
Silicon NPN triple diffused high voltage transistor Vcbo=450V |
TOSHIBA |
4123 |
2SC161 |
High Power Switching Transistor |
TOSHIBA |
4124 |
2SC161 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
4125 |
2SC1615 |
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors |
ROHM |
4126 |
2SC1621 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
4127 |
2SC1621R |
High Speed Switching NPN silicon epitaxial transistor |
NEC |
4128 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
4129 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
4130 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
4131 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
4132 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
4133 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
4134 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
4135 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
4136 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
4137 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
4138 |
2SC1688 |
For high-frequency amplification |
Panasonic |
4139 |
2SC1706 |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
4140 |
2SC1706H |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
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