No. |
Part Name |
Description |
Manufacturer |
4111 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
4112 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
4113 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
4114 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
4115 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
4116 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
4117 |
2N6076 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
4118 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
4119 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4120 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4121 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
4122 |
2N6099 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4123 |
2N6099 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
4124 |
2N6101 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4125 |
2N6101 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
4126 |
2N6103 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4127 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
4128 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4129 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
4130 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
4131 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
4132 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4133 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
4134 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
4135 |
2N6111 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4136 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
4137 |
2N6121 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4138 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
4139 |
2N6122 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
4140 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
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